The DLTS method is an excellent technique to detect the electronic state (deep level) created 

by crystal defects with high sensitivity.

Since semiconductor materials are greatly affected by very small inherent impurities or lattice 

defects (crystal defects), defect evaluation is extremely important.In the DLTS method, by monitoring

the dynamic process by which the carrier (e.g. electron) trapped in the deep level is emitted into 

the band (conduction band), through the transient changes in the junction capacitance of the sample,

 the parameters (energy levels, capture cross-section) and concentration value, spatial distribution etc.

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 of the level can be known.

The Phystech (Germany) DLTS Measuring Device (FT1230 HERA-DLTS) sold by our company, 

in addition to being a highly sensitive measuring system essential in DLTS Measuring, is also 

a sophisticated measuring instrument equipped with software capable of dealing with defect 

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evaluation for various semiconductor materials.

The FT1230, in addition to the basic DLTS measurement mode, has an ICTS (Isothermal 

Capacitance Transient Spectroscopy) mode for time domain measurement under fixed 

temperatures.As well, the FT1230 can meet the needs for optical DLTS / ICTS using optical pulses, 

CC mode (Constant Capacitance-DLTS), current mode DLTS / ICTS, and PITS (Photo-induced 

current Transient Spectroscopy) method, effective for measuring semi-insulating semiconductors 

and ultra-thin layers where the entire sample is depleted, and TSC method (Thermally Stimulated 

Current) etc.Current mode, and DLTS / ICTS measurement, are also applied to defect evaluation

 

in three-terminal elements such as FET etc.