PECVD systems are capable of depositing high quality SiO2, Si3N4, CNT, DLC or SiC films on up to 8”
diameter substrate sizes. Depending on applications many different plasma sources can be used which include: RF shower head electrode, Hollow Cathode RF plasma source, ICP plasma source or Microwave plasma source. Substrate platen can accommodate up to 8” wafers and can be biased with RF, Pulsed DC, or DC while being heated up to 800°C resistively or with IR lamps and cooled with chilled water. The chamber is evacuated to low 10-7 torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump.. The systems are automated fully with PC control.
PECVD System Feature and Option
FEATURES
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• 13" Al chamber or 14" SS cube chamber
• 5 x 10-7 Torr base pressure attained with turbo pumping package
• RF showerhead plasma source
• Gas ring for reactive gases
• 200°C to 800°C substrate heating options
• MFC’s with electro polished gas lines and pneumatic shut-off valves • PC based fully automatic recipe or manually driven control system • State of the art user interface
• EMO protection and safety interlocks
OPTIONS
• NM-ICP source for high density plasma
• Hollow cathode plasma source
• Microwave plasma source
• Substrate Pulsed DC bias
• Substrate LF bias for film stress control
• Rotating platen for coating 3D parts
• Auto load/unload
• Dry pump
• Bubblers for organo-metallics with heated gas lines
• Gas box for toxics gases with toxic gas monitors
• End point detection
• Various dopants (PH3, B2H6)
APPLICATIONS
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• SiOx, SiNx and SiOxNy deposition • Amorphous Silicon deposition
• Diamond-like carbon deposition
• Photonics structures
• Encapsulation, isolation
• CNT's - Memory devices
PECVD System SPEC and Utilities
