The Electron Beam Evaporation system is available in two different configurations: A compact vertical dual chamber configuration features a 14” cube main chamber where the platen is located, and underneath the main chamber a secondary chamber is provided for housing the e-beam source. This configuration can be provided with a gate valve between the two chambers to be used as a load lock to keep the e-beam source and the evaporation pockets in vacuum while substrates are loaded and unloaded from the main chamber. For applications where automatic loading and unloading of wafers are needed a third chamber is attached to the left face of the cube for another load lock. In this case, the main chamber can be kept at low 10-7 torr range at all times and evaporation can start just a few min- utes after loading the wafer. The second configuration features a single large chamber design that allows e-beam evaporation guns, magnetrons, and thermal evaporation mounted onto the baseplate. In this configuration coating of multiple wafers are possible using planetary substrate holder.
E-BEAM EVAPORATOR System Feature and Option
FEATURES
​
• 14” cubical or 21”x21”x22” SS chamber
• 5x10-7 torr base pressure attained with turbomolecular
pumping package
• 4x 15cc pocket E-gun
• Source and substrate shutters
• 6 and 10 kW switching power supply
• Automatic pocket indexing
• Programmable sweep controller
• 26”x44” footprint with SS panels for Class 100 cleanrooms • Quartz crystal thickness sensor
• Substrate rotation
• LabVIEW user interface
• EMO protection and safety interlocks
OPTIONS
​
• Substrate heating up to 800°C or cooling
• Glancing Angle Deposition (GLAD) with rotation
• Planetary substrate holder
• Substrate RF/DC bias
• Dual e-beam source for co-evaporation
• Ion source for substrate cleaning and ion assisted evaporation • Additional PVD sources (thermal, sputtering)
• MFCs for reactive evaporation
• Automatic load/unload
APPLICATIONS
​
• Lift Off
• Optical Coatings
• Thin Film Transistors • Active CIGS layer
• Josephson Junctions
​
SPECIFICATION
Process Chamber:
SS 14” Cube with 8” Door and source chamber mounted on the bottom of the base plate or 21”W x 21”H x 22”D Stainless Steel chamber with large 20” x 20” access door
Substrate fixturing:
Heated platen and rotating single substrate holder for up to 8” wafer, tiltable platen for glancing angle deposition with optional stepper motor driven shutter, high temperature platen up to 800°C.
For large chamber batch systems substrate holder for various substrate sizes include 90°angle of incidence planetary rotation with 3 planetary globes having variable angle and flip chip capabilities
Source Access:
Easy source access can be accomplished by either opening the source load flange to change materials or by lowering the source housing plate for source cleaning
E-Vap Source:
Rotary (optional 6 Pocket) 4 pocket, 15 cc (or optional 40cc per pocket), 6 kW, directly cooled crucibles, E-Vap source Flush-top design reduces cross-contamination of materials
E-Vap Power Supply:
6kW, Switching power supply, air cooled, 208/220 VAC three phase, power supply E-Vap Source Control: Source Control Module with remote, output 12VAC, Air Cooled
E-Vap Sweep Control:
Sweep Controller, Programmable sweep, touch screen programming, computer interface to RS-232, stores up to eight user-modified patterns
Instrumentation Port:
An additional port has been provided for instrumentation such as an RGA
Pumps:
680 l/sec, 1240 1/sec turboolecular pump or cryo pump with pendulum valve and water cooled; 21cfm dry scroll pump
Base Vacuum:
Less than 5 x 10-7 torr in a clean system, with cryo pump (option) base pressure is 10-8 torr range