Atomic Layer Deposition is an important technique for depositing thin films for a variety of applications. ALD is able to meet the needs for precise thickness control and conformal deposition in high aspect ratio structures to a level that far exceeds other deposition techniques. The nature of the sequential, self-limiting surface reactions in ALD produces a non statistical deposition because the randomness of the precursor flux is not a factor. As a result, ALD films remain extremely  smooth,  continuous,  and  pin-hole  free allowing  for  excellent  film  properties.  ALD processing can also be scaled to very large substrates. 

The NLD series is a stand alone, PC controlled ALD system with LabVIEW software featuring four levels password-controlled  user  authorization. The  system is fully automated and safety-interlocked and offers flexibility to deposit multiple films (ex. Al2O3, AlN, TiN,  ZrO2,  LaO2,  HfO2)  for  Semiconductor, 
Photovoltaic and MEMS applications. It has a 12" aluminum reaction chamber with heated walls and a pneumatically lifted top for easy chamber access and cleaning. The  system  features  an  onboard  gas  pod containing  up  to  seven  heated  50cc  cylinders  for precursors  and  reactants  with  fast-pulse  heated delivery valves using N2 or Ar as a carrier gas. 

Unreacted precursor can be managed with a heated filter on the chamber exhaust port. All heater set points are PID controlled. Automatic PC control of recipes, temperatures, flows, pumpdown/vent cycles, and delivery line flusing. Options include automatic load-unload (without changing system footprint), planar ICP source with remote plasma for Plasma Enhanced ALD (Planar ICP geometry maintains a small reaction chamber volume, speeding up cycle times), turbomolecular pump for faster cycles and a lower base pressure.